Generalized inverse lithography methods for phase-shifting mask design
نویسندگان
چکیده
منابع مشابه
Generalized inverse lithography methods for phase-shifting mask design.
Optical proximity correction (OPC) and phase shifting masks (PSM) are resolution enhancement techniques (RET) used extensively in the semiconductor industry to improve the resolution and pattern fidelity of optical lithography. In this paper, we develop generalized gradient-based RET optimization methods to solve for the inverse lithography problem, where the search space is not constrained to ...
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ژورنال
عنوان ژورنال: Optics Express
سال: 2007
ISSN: 1094-4087
DOI: 10.1364/oe.15.015066